^emi-conduckoi {product*, one. 2 0 ster n ave . springfield , ne w jerse y 0708 1 us a p|n p germaniu m al l ^ y junctio n powe r transistor s ? ' -- ' ? ?*,-..' . ' ? theseineijneucali y sedie u germaniu m r w powe r transistor s ar e designe d fo r us e i n serypfamplifiers , powe r converters , rela y drives , voltag e regulators , switchin g applica - tions , etc . the y ar e capabl e o f dissipatin g 1 0 watts a t a cas e temperatur e o f 71 c an d current s o f 3 amp . dynami c testin g o f electrica l parameters assure s conformanc e t o user s -requirements . welde d constructio n o f th e t o 1 0 cas e an d tru e hermeti c sea l o f glass-to-meta l termina l heade r provide s assuranc e o f performanc e i n environmenta l extremes . widel y space d termina r lug s ar e plate d t o facilitat e lea d attachmen t i n productio n an d ar e securel y anchore d t o i preven t possibl e damag e i n use . al l hea t sin k surfaces , ar e plate d t o avoi d corrosion , whic h woul d otherwis e introduc e electrica l o r therma l discontinuities . desic n limit s telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 378-896 0 2n53 & 2n539 a 2n538 a 2n54 0 2n539 v 2n540 a r .36 0 .33 0 i co?ector-io-5as e voltage , v c b collectonto-emitter , voltage , v c e activ e regio n (emitte r forwar d biased ) \f 'regio n (emitte r revers e biased ) emitter-to-bas e voltage , v e , emittericurren t (rms) , i e baselcurren t (rms) , l ( operatin g an d junctio n temperature , t j norma l resistance , junctio n t o mountin g bas e 6 2n53 8 2n538 a -8 0 -6 0 -8 0 -2 8 -3. 5 -0. 5 -6 5 t o +10 0 2. 2 2n53 9 2ns39 a -8 0 -5 5 -8 0 -2 8 -3. 5 -0. 5 -6 5 t o + 10 0 2. 2 2n54 0 2n540 a -8 0 volt s -5 5 volt s -8 0 volt s -2 8 volt s -3. 5 amp , -0. 5 amp . -6 5 t o +100 c 2.2c/ w ,oo o max . solde r lug 5 characteristic s a t 25 < c curren t gain , commo n emitter , h, f l.--2a;v ce - -2 v i pase-to-emitte r voltage , v k l? - -2a;v? = -2 v power ; conductance - common " flitter , g , l?--2a ; v? - -2 v inputiresistance - commo n emitter , h, t !? ' - -r2a;.v ? - ~2 v thermal ' resistance , junction-mountin g . ba?, e fime , respons e o f junctio n temperature , * 2n53 8 2n538 a 2n53 9 2n539 a 2n54 0 2n540 a 2n53 8 2n538 a 2ns3 9 2n539 a 2n54 0 2n540 a 2n538 a 2n539 a 2n540 a 2n538 a ?n539 a 2n540 a min . 2 0 2 0 3 0 3 0 4 5 4 5 -1.3 3 -1.3 3 -1. 0 -1. 0 -0.7 5 -0.7 5 17. 5 3 5 7 1 2 4 2 7 3 0 1 0 typ . 3 0 3 0 4 3 4 3 6 4 6 4 -2. 2 -2. 2 -1. 7 -1. 7 -1. 3 -1. 3 2 7 5 1 .10 0 3 3 3 7 4 2 1. 7 " 3 0 max . 5 0 5 0 7 5 7 5 11 3 11 3 -3.3 3 -3.3 3 -2. 5 -2. 5 -1.8 8 -1.8 8 5 2 10 5 21 3 48 " 5 4 6 0 2. 2 uni t vol t vol t vol t vol t vol t vol t mh o mh o mh o "ohm " oh m oh m c/ w m s min . typ . max . un h collecto r junctio n leakag e current , ici o alph a = 1 voltage , collecto r junction , v? = 1 emitte r floatin g potential , v e1 f emitte r junctio n leakag e current , it. o collecto r saturatio n voltage , v s gai n bandwidt h produc t hi . ? fa, , (2iaco ) it * vc. . - vc i = vc , = se c rf , = vr , - vc , - l r = v, . - v ? = 1 i g i , = ir . = vr. f = ! ? = 0 = 2v = -28 v ? -80 v revers e 6 0 sid e -5 5 -5 5 10 k = 60v = -80 v 0 -2 v -28 v -2 a -200m a -loom a = -4 v 20 0 -im a _ -0.0 4 -0. 1 (2n538 , (2n539 . (2n540 , - -0. 1 _ _ -0.0 3 -0.1 5 -0.1 5 _ -0. 1 -1. 0 -2. 0 2n538a ) 2ns39a ) 2N540A ) -0. 3 -0. 5 -0.1 5 -2. 0 -0. 6 _ m a m g m a volt s volt s volt s _ vol t vol t _ - m a m a 1 vol t k g n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , parameter s limit s an d packag e dimension s withou t notic e informatio n ftirnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . howeve r n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n i semi-conductor s encournge s customer s t o verif y fhn t datasheet s :ir e curren t kjfiir e placin g orders . downloaded from: http:///
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